Abstract
The conduction of an infinitesimally thin layer of carriers is in a small signal approximation described in the semiconductor sample biased at a uniform electric field where the dielectric relaxation time is comparable to the transit time of carriers. The discussion is concentrated on the dielectric relaxation effect of the traveling majority and minority carriers. It is shown that the dielectric relaxation effect of the traveling majority carriers is just same as that of the static ones while the effective dielectric relaxation time for the traveling minority carriers becomes longer than that for the static ones.
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