Dielectric Properties of BaTiO3 Films with SiO Layers Formed by Direct Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams

Abstract

BaTiO3 thin films (<200 nm) were directly deposited on Si wafers using an oxygen-ion-beam-assisted deposition technique. Si surfaces were oxidized during the deposition. The thicknesses of the formed SiO2 layers were proportional to the ion beam current and were almost independent of the ion beam energy and the N2 flux. The BaTiO3 films with thin SiO2 layers (20 nm) had larger remanent polarizations (∼2 µC/cm2) than the BaTiO3 films with thick SiO2 layers (25 nm). Many prepared films had a coercive field of about 50 kV/cm.