Abstract
We report the growth of ⟨001⟩-oriented Ba0.6Sr0.4TiO3 (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and γ-Al2O3 buffer layers. Dielectric constant values of our BST films were up to ∼85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100Hz to 1MHz. These results demonstrate the versatility of using IBAD-textured MgO and γ-Al2O3 buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.
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