Abstract
The pseudo-dielectric functions for In 1− y Al y As on InP (0.305≤ y≤0.635) were measured using spectroscopic ellipsometry over the 1.5–5.6 eV photon energy range. The layer compositions were measured using double crystal X-ray diffraction. The pseudo-dielectric functions were fit using a critical point-based approach, and a numerical dielectric function model was generated with the Al fraction, y, as the only free variable. The extracted optical responses were used in process monitoring applications.
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