Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films

Abstract

The effects of post plasma treatment on the dielectric properties and reliability of fluorine-doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) are studied. Also, the thermal stability of an electrodeposited Cu/sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was found to be improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective for the prevention of water absorption and stabilization of the dielectric constant. The Cu/Ta/SiOF/Si system was thermally stable up to 500°C for 3 h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a significant role in suppressing the interdiffusion between SiOF and metal interconnects. By C–V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 3 h.