Abstract
The effect of plasma treatment time on the properties of fluorinated amorphous carbon (a-C:F) films was investigated. Fluorinated amorphous carbon films were prepared by using electron cyclotron resonance chemical vapor deposition (ECRCVD). The post-plasma treatment of the a-C:F films was carried out using H2 plasma with various plasma treatment times after deposition without vacuum breaking. As the plasma treatment time increased, the fluorine concentration of the film surface decreased. The refractive index and the dielectric constant remain nearly constant. The surface energy increases sharply during the first 5 s of plasma treatment. When the plasma treatment was employed, the leakage current density of a-C:F film becomes one order lower than that of the untreated film. Through this study, it was found that the plasma treatment of a-C:F films induced the surface more reactive and affected the fluorine concentration of the surface, the structure of chemical bonding and electric properties.
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