Abstract
A direct patterning technology of low-permittivity silicate-based polymer is investigated with electron-beam lithography for multilevel interconnections. The smallest feature size of 60 nm for damascene lines can be directly patterned in the silicate film. In this direct patterning, dielectric regions exposed by electron beam are crosslinked and form desirable patterns, while the others are dissolvable in an aqueous solution containing 2.38% tetramethylammonium hydroxide. With an optimum condition of electron-beam lithography, the electron-beam-irradiated silicate exhibits superior dielectric properties than that of the furnace-cured silicate film, due to minimizing the break of Si–H bonds and moisture uptake. The explanation is in agreement with the analyses of Fourier transform infrared spectroscopy and thermal desorption spectroscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
