Direct patterning on low dielectric constant materials with electron beam lithography

Ben-Chang Chen Ben-Chang Chen,Hsuen-Li Chen Hsuen-Li Chen,Yee-Kai Lai Yee-Kai Lai,Cheng-Tung Chou Cheng-Tung Chou,Fu-Hsiang Ko Fu-Hsiang Ko

doi:10.1109/imnc.2001.984143

Direct patterning on low dielectric constant materials with electron beam lithography

Ben-Chang Chen Ben-Chang Chen, Hsuen-Li Chen Hsuen-Li Chen + Show 3 more

https://doi.org/10.1109/imnc.2001.984143

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Publication Date: Jan 1, 2001

Affiliation: National Applied Research Laboratories, National Central University

#Electron Beam Lithography #Low Dielectric Constant Materials + Show 8 more

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Abstract

Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.

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