Abstract
Indium oxide thin films have been deposited in vacuum (10 −5 Torr) by thermal evaporation of indium oxide (In 2O 3) powder using an electron beam. The deposited films were annealed in air and in oxygen at 473 K for 2 h. Pure aluminium electrodes were deposited using suitable masks to form the sandwich structure AlIn 2O 3Al. Using this metal-insulator-metal structure, the aging effect and variations in capacitance and dielectric loss were studied in the frequency range 200 Hz to 30 kHz at different temperatures. A negative temperature coefficient of capacitance (TCC) was observed for films of various thicknesses in different temperature ranges. The variation of dielectric loss (tan δ), measured at 1 kHz, with temperature was characterized by loss peaks which were found to shift towards the low temperature region with increasing thickness. Cole-Cole plots were drawn and the spread in mean relaxation time was also determined at different temperatures; the results are discussed.
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