Differences between amorphous indium oxide thin films

Abstract

A series of ~60nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2g/cm3 at +50°C to 5.3g/cm3 at −100°C.