Abstract
This work presents the results of a comparative study of dielectric and pyroelectric properties of aluminum nitride (AlN) single-layer and multilayer samples with a thickness of 100 ÷ 200 μm grown in the [0001] direction by chloride-hydride epitaxy. A silicon wafer covered by silicon carbide nanolayer grown by solid-phase substitution (SiC/(111)Si) was used as a substrate for subsequent growth of AlN single crystalline layers. The samples were formed by layer-by-layer growth. It is shown that such method makes it possible to change the orientation of the polar hexagonal axis in AlN single crystals.
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