Dielectric and electric properties of Zn doped and undoped Bi2/3Cu3Ti4O12 ceramic prepared by chemical route

Abstract

Zn-doped and un-doped BCTO ceramics (Bi2/3Cu3−xZnxTi4O12, x = 0 and 0.05) were prepared by chemical route sintered at 1123 K for 8 h. The Phase formation of ceramics were confirmed by X-ray Diffraction. Their microstructural properties were examined through SEM, EDX, and TEM. The dielectric constant (ɛr) of BCTO ceramic was obtained higher than BCZTO-0.05 ceramics at 100 Hz and 470 K. The tangent loss (tan ) value for Zn doped BCTO ceramics were found to be lower than undoped BCTO ceramics at 10 kHz and 310 K. The conductivity dependence of Bi2/3Cu3−xZnxTi4O12 ceramics (where x = 0, 0.05), with the inverse of temperature follows the Arhenius equation, with a major temperature range of 300–500 K.