Abstract
Abstract This paper reviews our research on diamond synthesis by etc plasma jet CVD. The unique feature of this method is supplying high radical density plasma to a substrate by quenching a thermal plasma. The maximum growth rate is 200 μm/h. The crystallinity measures well in terms of x-ray diffraction and Raman spectroscopy. The morphology of diamond film is affected strongly by methane concentration and the spacing between the torch nozzle and substrate. Plasma analysis by optical emission spectroscopy indicates that the plasma jet is not in equilibrium and contains many activated radicals. This paper also describes our application of a thick diamond film to the heat sink of a laser diode.
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