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Abstract
AbstractWe successfully fabricated a diamond diode, namely a Schottky p–n diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p‐type layer and a Schottky metal. The diamond SPND showed a high forward current density (over 4000 A cm−2 at 6 V) with a low built‐in voltage (∼1.5 V) at room temperature while maintaining a high rectification ratio of ∼1010. Further improvement of the high forward current density characteristics was found at high temperature. The SPND can be realized with higher forward current density than that of conventional diamond Schottky barrier diode, p–n diode, and recently proposed merged diodes, while maintaining the high rectification ratio.
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