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Abstract
We successfully fabricated diamond Schottky-pn diodes (SPNDs) using a lightly nitrogen-doped (N-doped) layer. The diamond SPNDs showed a high forward current density of over 20,000A/cm2 at 7V, a high rectification ratio of over 1013, and a high breakdown electric field of 3.3MV/cm at room temperature. These properties mean that the N-doped layer acted as an n-type semiconductor. The N-doped n-type layer is effective in the SPNDs as same as a phosphorus-doped n-type layer.
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