The influence of auger recombination on the forward characteristic of semiconductor power rectifiers at high current densities

Abstract

It has previously been shown that the recombination of carriers in silicon and germanium at high carrier concentrations is dominated by Auger recombination (impact recombination). Carrier concentrations of 10 18 cm −3 and higher may occur in high-current devices such as power rectifiers and thyristors. The present paper analyzes the influences of the Auger recombination on the forward characteristic of pin and psn rectifiers at high current densities. It is an extension of the theory developed by Herlet, Spenke et al. for such devices, and does not take into account the concentration dependence of the carrier mobilities. It shows that the Auger recombination is important for the understanding of the current-voltage characteristic at high forward current densities.