Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications

Abstract

High-current vertically structured diamond Schottky barrier diodes (SBDs) with a thick field plate and a doping-controlled drift layer were fabricated. The fabricated vertical SBD (VSBD) realized forward currents and blocking voltages of more than 1 A and 300 V at 250 °C. The VSBD was mounted on a metal-ceramic package with a gold bonding wire and a high-temperature resistive resin. The switching behavior of the packaged diamond VSBD was characterized by a double-pulse method at elevated temperatures. The device showed a short turn-off time with a low switching charge of less than 5 nC, which remained almost constant even at 250 °C.