Abstract
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
Highlights
Today silicon devices have reached their physical limits either in terms of scaling down or in terms of their physical properties [1,2]
To study the substrates impact on the performance of Gallium nitride (GaN)-based power device, Figure 2 summarizes the data from literatures of GaN vertical Schottky barrier diode (SBD) with different substrates
Seung-Chul et al [73] demonstrated that vertical GaN SBDs with a metal floating field plate termination has a higher breakdown voltage (BV) of 353V than conventional structure (159 V)
Summary
Today silicon devices have reached their physical limits either in terms of scaling down or in terms of their physical properties [1,2]. SiC-based power devices have been already commercialized for high-voltage and high-power application [9,10]; diamond is another promising candidate [11,12] Among all of these wide bandgap semiconductor material, GaN has a higher electron mobility than SiC and higher critical electric field than Si [13]. All problems, (3) large total device area, and (4) the deep etched sidewall process The fully-vertical advantages of effective device size and good thermal performance by cooling from both sides of the (a)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
