Abstract
This paper reports correlation between reverse current (IR) of diamond Schottky barrier diodes (SBDs) and luminescence feature. p‐Type vertical SBDs were characterized by current–voltage and cathodoluminescence (CL) measurements. From an exciton image taken at the electrode deposited area, non‐luminescence spots with number density of 104–105 cm−2 were confirmed. No marked relation was found between the density of non‐luminescence spots and IR. A larger IR of >10−5 A was observed when an electrode was deposited on an area that showed bright Band‐A luminescence spots in the CL image. In addition, diodes on the belt‐shaped luminescence in the Green‐band image showed large IR.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
