Abstract
To grasp a greater understanding and explore the various quantum technologies, it is imperative to efficiently fabricate a single crystalline material that can host bright point defects. Point defects or single photon sources are necessary to push the boundaries for quantum technologies, specifically, quantum telecommunications and quantum computing. This endeavor has led to several 1D, 2D and 3D platforms to be explored to test their applicability for the generation of pure single photon emitters (SPE). One of these platforms include diamond due to its wide bandgap and ability to host a variety of photostable, optically active group IV SPE defects at room temperature. Several diamond defects have been studied extensively, including the Nitrogen vacancy (NV), Silicon vacancy (SiV) and, recently, the Germanium vacancy (GeV) color centers and have all shown to be stable SPEs at room temperature. In addition to be an optically active single photon source, the defect additionally requires the ability to be electrically excited. Electrically pumping SPEs is highly desired for optoelectronic applications. These properties of diamond have led to several publications on the fabrication and characterization of optically and electrically excited 3D devices fabricated from diamond. This chapter delves into the fabrication of nanoscale, high aspect ratio conductive diamond membranes that can host group IV color centers. These structures demonstrate several key advantages which include scaling of emitter creation and ease of transfer between substrates.
Published Version
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