Abstract
Abstract Diamond was grown on polycrystalline CoSi 2 /Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼10 9 cm −2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi 2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi 2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.
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