Diamond growth by carbon ion implantation of diamond

Abstract

Abstract Medium energy (5–25 keV) 13 C + ion implantation into diamond (100) to a fluence ranging from 10 16 cm −2 to 10 18 cm −2 was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 × 10 17 to 2 × 10 18 at. cm −2 (with a dose rate of 5 × 10 15 at. cm −2 s −1 at 5 to 25 keV and 800 °C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects.