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Abstract
Medium-energy ion scattering and transmission electron microscopy have been used to study the structural perfection of a Si single crystal implanted with 100 keV Si ions at a dose of 1×10 17 cm −2, which exceeds the amorphization threshold by two orders of magnitude. The implantation of Si ions was found to produce a high density of extended defects without amorphization of the Si layer. The increasing depth dependence of the full width at half-minimum of the dip in angular scans of backscattered protons, was observed in a Si layer containing a high density of extended defects, in contrast to the decreasing dependence in the perfect Si crystal.
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