Abstract
Modulation of the fundamental absorption edge by a high lateral electric field in a p-type In0.21Ga0.79As/GaAs heterostructure with quantum wells was studied at 4.2 K and electric fields as high as 1.9 kV/cm. The field-induced change in the symmetric part of the hole distribution function was measured.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have