Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen.

Lu Wang,Dianzhong Wen,Jinyi Wang

doi:10.3390/nano10081491

Abstract

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 103. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 104 s.

Highlights

Natural biological materials have the advantages that they do not require artificial synthesis [1,2,3], they naturally degrade [4,5], and they show good compatibility with the body [6]
The RESET voltage decreases as the graphene oxide (GO) concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage
They have been applied in field-effect transistors [7], batteries [8], organic light-emitting diodes (OLEDs) [9], and resistive random-access memory (RRAM) [10,11,12]

Summary

Introduction

Natural biological materials have the advantages that they do not require artificial synthesis [1,2,3], they naturally degrade [4,5], and they show good compatibility with the body [6] They have been applied in field-effect transistors [7], batteries [8], organic light-emitting diodes (OLEDs) [9], and resistive random-access memory (RRAM) [10,11,12]. For composite GO-polymer materials, different GO mixing ratios will yield devices that exhibit adjustable resistance switching characteristics as a result of trapping and de-trapping of carriers in the GO [25,26,27,28,29,30]. The device can be continuously switched more than 200 times

Materials and Device Fabrication

Characterization

Conclusions