Abstract
Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance.
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