Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers

Abstract

The poly(ethylene naphthalate) (PEN) substrates have two sides of bare PEN and primer-coated surfaces treated to provide slip property for film production. Although the primer surface showed porous and inhomogeneous morphologies, a hybrid inorganic/organic double-layered barrier layer can effectively improve the surface roughness and permeability. The fabricated amorphous In-Ga-Zn-O thin-film transistors on the PEN substrates with hybrid barrier showed good performances and did not experience any degradation under the mechanical bending situation at a curvature radius of 3.3 mm. The variation in the threshold voltage was evaluated to be approximately −0.1/1.6 V under the negative/positive bias stress tests, respectively.