Abstract
At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.
Highlights
We had found that the aggregated particle sizes of the Cr-Si and Ni-Cr thin films increased with the increase of deposition time even both of them revealed the amorphous phase
As the deposition time increased from 10 min to 120 min, the thickness of Cr-Si thin films increased from 48.0 nm to 356.2 nm and the thickness of Ni-Cr thin films increased from 64.3 nm to 487.1 nm
As the deposition time increased from 10 min to 60 min, the temperature coefficient of resistance (TCR) value of Cr-Si thin-film resistors was changed from −1467 ppm/ ̊C to −1864 ppm/ ̊C and the TCR value of Ni-Cr thin-film resistors was in the range of 197 ppm/ ̊C - 230 ppm/ ̊C, respectively
Summary
A resistor is a passive two-terminal electrical component that implements electrical re-. Thick-film resistors became popular during the 1970s, and most surface mount device (SMD) resistors today have used this type of resistors. The thickness of thick-film resistive elements is 1000 times thicker than that of thin-film resistive elements, but the principal difference is how the thin-film resistors can be applied as the cylinder (axial) resistors or the surface resistors. The noise levels of thin-film resistors are on the level of 10 - 100 times less than those of thick-film resistors. In integrated circuits (ICs) fabrication technologies, thin-film resistors can be fabricated by deposing thin films on the wafers’ surfaces or using diffusion methods in the base and emitter regions of bipolar transistor and in source and drain regions of CMOS
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