Abstract
A temperature-stable low-dielectric constant (K approximately 10) thick-film dielectric was developed. Dielectric formulations were prepared by combining appropriate amounts of alpha -Al/sub 2/O/sub 3/, gamma -Al/sub 2/O/sub 3/, or TiO/sub 2/ with Frit G1 and/or Frit G2. A dual frit approach proves to be an effective method in eliminating the pinhole problems in the fabrication of thick-film capacitors. Substrate bodies and diffusion of electrode and substrate ingredients into the dielectric are two major factors which affect the dielectric properties of the capacitors. The low-K dielectric developed in this study can work adequately from 25 degrees C to 500 degrees C, and at 500 degrees C for an extended period of time. >
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