Abstract
Surface Hall potentiometry is a method of detecting the Hall effect occurring in a semiconductor material as the surface potentials change. An experimental setup to detect surface Hall potentials by the Kelvin method is introduced. After we reveal the basic characteristics of surface Hall potentials, a silicon sample is prepared to induce the variation of the drift velocity of carriers. Line-profile measurements of surface Hall potentials with this sample demonstrate that our method reveals the distribution of drift velocities of carriers in semiconductors, which reflects electronic or structural properties such as the carrier type (hole or electron), current density, and thickness.
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