Abstract
Super-junction (SJ) devices have been developed to improve the trade-off relationship between the blocking voltage (VBD) and specific on-resistance in unipolar power devices. This SJ structure effect is expected in SiC unipolar devices. Multi-epitaxial growth is a known fabrication method for SJ structures where epitaxial growth and ion implantation are repeated alternately until a certain drift-layer thickness is achieved. In this study, we fabricated two types of test elemental groups with an SJ structure to evaluate the breakdown voltage (VBD) and specific resistivity of the drift layer (Rdrift). Experimental results show that VBD exceeded the theoretical limit of the 4H-SiC by 300V, and Rdrift agreed well with the estimated value from the device simulation. The beneficial effects of the SJ structure in the SiC material on VBD and Rdrift were confirmed for the first time.
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