Abstract
For the first time Multi-Mode Interference (MMI) power splitters have been fabricated directly by selective area growth, using a novel metal-organic vapor phase diffusion enhanced selective area epitaxy (MOVE2) process. The MOVE2 process features extremely wide-range in-plane bandgap control, high design flexibility and good uniformity under conventional growth pressure and therefore is very suitable for photonic integration. For bulk InGaAs material in-plane bandgap shifts as large as 200 nm have been obtained. The general incorporation characteristics of both group-III and group-V species in selective area grown InGaAsP have also been determined. The MMI power splitter excess losses were as low as 2 dB, including S-bend losses.
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