Abstract
For the first time multi-mode interference (MMI) power splitters have been fabricated by selective area growth, using our novel metal-organic vapor phase diffusion enhanced selective area epitaxy (MOVE/sup 2/) process which features extremely wide-range in-plane bandgap control and high design flexibility and therefore is very suitable for photonic integration. Excess losses as low as 2 dB have been obtained for MMI power splitters with smooth and sufficiently flat waveguide structures including S-bends.
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