Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer

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AbstractIn this study, we developed a dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer. The surface of titanium coated with photoresist is polished by reactive ion etching using SF6 /C4F8 gas. Etching speed of titanium and photoresist were adjusted to close to each other by changing temperature and ratio of SF6 /C4F8 gas. By etching titanium under these conditions, the smooth surface shape of the resist was transferred to titanium. By combining with photolithography, it is possible to polish a specific part.