Abstract
ABSTRACTIn this paper, we have analyzed sheet thickness and gate voltage dependence of electrical characteristics for nanosheet MOSFETs using a device simulation that takes quantum confinement effects into account. Since the sheet thickness of nanosheet MOSFETs decreases to several nanometers, the simulated on‐current shows significant reduction compared to the on‐current required in the device design due to the quantum confinement effect. We analyze the relative difference between the on‐current required in the device design and the simulated on‐current and propose a design guideline using the relative difference. In order to suppress the relative difference of the on‐currents within 3%, the minimum sizes of the sheet thickness are 3.4, 4.5, and 5.5 nm at supply voltages of 0.70, 0.60, and 0.50 V, respectively.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call