Abstract
As one part of the development of electronic devices for use in high-temperature and high-radiation environments, especially for use in containment vessels of nuclear power plants, a differential amplifier circuit based on hydrogen-terminated diamond MOSFETs that have excellent radiation resistance and high-temperature operational capability were designed and fabricated. The 14 diamond MOSFETs were made using the same design on a 4-mm-square diamond single-crystal substrate. A FET model was fabricated from measured FET characteristics. Then the performance of differential amplifier circuit was simulated using the LTspice code. A differential amplifier part was formed using a pair of diamond MOSFETs with similar characteristics. In all, six diamond MOSFETs were used to construct the differential amplifier circuit. Then the circuit was operated in both inverting and non-inverting output modes. The maximum amplification factor was 4.7 for the non-inverting output at room temperature.
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