Development of Back-Channel Etched In-W-Zn-O Thin-Film Transistors

Abstract

Back-channel etched (BCE) thin-film transistors (TFTs) are developed using a novel oxide semiconducting material, In-W-Zn-O (IWZO). A bi-layer structure for the IWZO oxide semiconductor layer is proposed to realize both high resistance to back-channel etching damage and high TFT mobility. The developed IWZO BCE-TFTs exhibit high mobilities of up to 20.2 ${\hbox{cm}}^{2}/{\hbox{V}}\cdot{\hbox{s}}$ .