Abstract
Aiming at the limitation that the parasitic parameters of the existing dynamic test device are large and cannot be accurately measured, a low parasitic parameter dynamic test device is designed in this paper, which can realize the accurate measurement of the dynamic parameters of the high-voltage SiC MOSFET module. The test device consists of a hardware platform and a software system. The hardware platform includes the double-pulse test circuit, measuring instruments, power supply, DSP control device and other modules, and is the main execution unit of the test device. The software platform consists of the host computer and the LabVIEW man-machine interface, which can realize one-button automated testing. The 6.5 kV/400 A SiC MOSFET power module independently developed in China is tested by the test device, and the transient performance of it under different operating junction temperatures is studied. The experimental results have certain reference significance for the design optimization and application of SiC MOSFET under high voltage and high current.
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