Abstract
The capacitance of the Schottky barrier devices formed on high resistivity n-type CdTe films is analyzed. CdTe films are obtained by an electrodeposition method. Deviation in the capacitance from the expected behavior is explained using a model that takes into account the effect of a large density of deep traps in the material. Results are compared with the values reported previously for CdTe prepared by other techniques. A single dominant trap level is observed and identified as an electron trap which is 0.56 eV below the bottom of the conduction band edge. The capture cross section σ and the density of those traps are determined to be 7×10−14 cm2 and (1.7−3)×1016 cm−3 respectively.
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