Abstract
The natural valence-band offset (NVBO) between semiconductors in a common anion alloy system can be determined through photoemission core level measurements. In this work, we tested this method in the InxGa1−xAs system. The NVBO between GaAs and InAs is measured to be 0.11±0.05 eV. This result is in approximate agreement with the experimental value of 0.17±0.07 eV determined by x-ray photoemission spectroscopy measurements.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
