Abstract
In short channel MOSFETs the effects of series resistance become increasingly important. In this paper the limitations of two existing series resistance measurement methods [1,2] will be discussed. Because of their limitations a new measurement method will be presented for the determination of the gate voltage dependent series resistance. In addition a very useful numerical process and device simulation method to estimate the source (drain) series resistance under several bias conditions will be discussed.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call