Abstract
The k-space extension, \ensuremath{\Delta}k, of the heavy-hole wave function in GaAs is determined utilizing the photomodulation technique. In this technique, optical transitions between the usually full split-off and heavy-hole bands, are induced by continuously photogenerating electron-hole pairs. The observed absorption profile fits well a model that assumes that the heavy hole is weakly localized by charged centers. The localization length corresponding to \ensuremath{\Delta}${\mathit{k}}^{\mathrm{\ensuremath{-}}1}$ is 18 \AA{}.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
