Abstract
The effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that Au/PVDF/n-InP structure exhibits a good rectifying behavior. The calculated barrier heights (BHs) are 0.73 eV (I-V), 0.88 eV (C-V) for Au/PVDF/n-InP Schottky diode, respectively. The values of the barrier height, ideality factors and series resistance estimated by I-V and Cheung’s methods are compared. The discrepancy between barrier heights estimated from I-V and C-V methods is also explained.
Published Version
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