Abstract
Abstract Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (κmin = 3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard’s law when large strain exists is discussed.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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