Determination of spin polarization in InAs∕GaAs self-assembled quantum dots

Abstract

The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measured values of the addition energies. From the magnetocapacitance spectroscopy data, the authors found a fully polarized ensemble of electronic spins above 10T when B∥[001] and at 2.8K. Finally, by including the g-tensor anisotropy, the angular dependence of the spin polarization with the magnetic field B orientation and strength could be determined.