Abstract
A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
