Abstract
A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call