Abstract
The paper presents equations for an scr model suitable for cad implementation. The model components are specified in terms of the device doping profile and junction areas and data is presented for medium power inverter and converter scr's. Built-in but inherent temperature scaling is included. Certain electrical ratings can be determined from structure information. The approach developed is applicable to high voltage transistors, rct's and triacs and can be extended to include the modelling of hi-lo junctions.
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