Abstract
Accurate knowledge of the gap density of states (DOS) is of paramount importance for process control and modelling of thin-film transistors (TFTs). We present here an approach for flat band determination, based on the combined analysis of transfer and capacitance-voltage characteristics. The method is independent from the DOS knowledge and requires no fitting parameters. Applied here to the case of amorphous indium gallium zinc oxide TFTs, our approach yields key device parameters, helping identification of the physical mechanisms responsible for device to device variations and degradation phenomena. It appears in particular capable to differentiate between interface and bulk effects.
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