Abstract
Experimental data of energy gaps, band offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells are utilized for the determination of Γ electron and light hole effective masses in AlxGa1−xAs compounds on the basis of the author’s relations between these quantities. The temperature dependences of electron and light hole effective masses in GaAs are also obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
