Abstract
Relations are presented for calculating electron and light-hole energy levels in quantum wells on the basis of knowledge of the electron and light-hole effective masses, the lattice constant, and the width of the well. The electron and light-hole band nonparabolicity of semiconductors forming the well is accounted for. The nonparabolicity of the heavy-hole band is neglected. The calculated values of En − LHn and En − HHn transition energies are in good agreement with recently published experimental data for various AlxGa1−xAs-GaAs, Ga0.51In0.49P-GaAs, and In0.53Ga0.47As-InP quantum wells.
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